High Fmax AlGaAs/GaAs HBTs for 40 GBPS ICs With Ultra-Low Resistance Base Ohmic Contacts

doi 10.7567/ssdm.1993.d-8-3
Full Text
Abstract

Available in full text

Date
Authors
Publisher

The Japan Society of Applied Physics

Related search

Characterization of Low-Resistance Ohmic Contacts to a Two-Dimensional Electron Gas in a GaAs/AlGaAs Heterostructure

EPJ Applied Physics
InstrumentationOpticalElectronicCondensed Matter PhysicsMagnetic Materials
2020English

Ultra Low-Resistance Palladium Silicide Ohmic Contacts to Lightly Doped N-InGaAs

Journal of Applied Physics
AstronomyPhysics
2012English

Specifics of Fabrication of Ohmic Contacts to AlGaAs/GaAs Heterostructures With a 2D Electron Gas

Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering
2016English

Low Resistance, Unannealed Ohmic Contacts to N-Type InAs0.66Sb0.34

2007English

Coherent Backscattering in Quasi-Ballistic Ultra-High Mobility GaAs/AlGaAs 2DES

Scientific Reports
Multidisciplinary
2018English

Heat-Resistant Ohmic and Barrier Contacts for GaAs-based Microwave Devices

Semiconductor Physics, Quantum Electronics and Optoelectronics
Electronic EngineeringOpticsMolecular Physics,OpticalElectricalAtomicMagnetic MaterialsElectronic
2003English

Ultralow Resistance, Nonalloyed Ohmic Contacts to N-InGaAs

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2009English

Ultralow Resistance Ohmic Contacts for P-Channel InGaSb Field-Effect Transistors

IEEE Electron Device Letters
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2015English

PtIn2 Ohmic Contacts to N‐GaAs via an In‐Ga Exchange Mechanism

Applied Physics Letters
AstronomyPhysics
1996English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy