Negative Capacitance as Performance Booster for Tunnel FETs and MOSFETs: An Experimental Study

IEEE Electron Device Letters - United States
doi 10.1109/led.2017.2734943
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Related search

Effect of Hysteretic and Non-Hysteretic Negative Capacitance on Tunnel FETs DC Performance

Nanotechnology
Mechanics of MaterialsElectronic EngineeringMechanical EngineeringMaterials ScienceNanoscienceElectricalBioengineeringNanotechnologyChemistry
2018English

Ambipolar Reduction Methodology for SOI Tunnel FETs in Low Power Applications: A Performance Report

International Journal of Recent Technology and Engineering
EngineeringManagement of TechnologyInnovation
2020English

Optimum Bandgap and Supply Voltage in Tunnel FETs

IEEE Transactions on Electron Devices
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2014English

Negative Capacitance for Electrostatic Supercapacitors

Advanced Energy Materials
Materials Sciencethe EnvironmentSustainabilityRenewable Energy
2019English

Axial Ge/Si Nanowire Heterostructure Tunnel FETs

2010English

Summary Abstract: Capacitance–voltage Characteristics in Modulation Doped Heterojunction FETs

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
1985English

Asymmetrically Strained All-Silicon Multi-Gate N-Tunnel FETs

Solid-State Electronics
Electronic EngineeringCondensed Matter PhysicsMaterials ChemistryOpticalElectricalMagnetic MaterialsElectronic
2010English

Investigation of the Gate Capacitance Characteristics of Short Channel MOSFETs.

English

Design and Experimental Validation of a Metacomposite Made of an Array of Piezopatches Shunted on Negative Capacitance Circuits for Vibroacoustic Control

2013English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy