Vertical InAs/GaAsSb/GaSb Tunneling Field-Effect Transistor on Si With S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at VDS = 0.3 V

doi 10.1109/iedm.2016.7838450
Full Text
Abstract

Available in full text

Date
Authors
Publisher

IEEE

Related search

Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si

IEEE Electron Device Letters
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2016English

Vertical Nanowire TFETs With Channel Diameter Down to 10 Nm and Point S MIN of 35 mV/decade

IEEE Electron Device Letters
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2018English

Vertical InAs Nanowire MOSFETs With IDS = 1.34 mA/µm and Gm = 1.19 mS/µm at VDS = 0.5 V

2012English

Submillimeter Number Counts at 250 Μm, 350 Μm and 500 Μm in BLAST Data

Astronomy and Astrophysics
AstrophysicsAstronomyPlanetary ScienceSpace
2010English

Effect of Si-Induced Defects on 1 Μm Absorption Losses in Laser-Grade YAG Ceramics

Journal of Applied Physics
AstronomyPhysics
2012English

InGaAs Nanowire MOSFETs With ION = 555 µA/µm at IOFF = 100 nA/µm and VDD = 0.5 V

2016English

1.5 Μm Lasers With Sub-10 mHz Linewidth

Physical Review Letters
AstronomyPhysics
2017English

Vertical InAs/InGaAs Heterostructure MOSFETs on Si

Nano Letters
Materials ScienceCondensed Matter PhysicsMechanical EngineeringNanoscienceBioengineeringNanotechnologyChemistry
2017English

Tunneling Spectroscopy of Metal-Oxide-Semiconductor Field-Effect Transistor at Low Temperature

Applied Physics Letters
AstronomyPhysics
2005English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy