Amanote Research

Amanote Research

    RegisterSign In

Subsurface Damage Profiling System for Semiconductor Material

doi 10.21236/ada206793
Full Text
Open PDF
Abstract

Available in full text

Date

March 1, 1989

Authors
Neil A. IvesMartin S. Leung
Publisher

Defense Technical Information Center


Related search

Material Sensitive Scanning Probe Microscopy of Subsurface Semiconductor Nanostructures via Beam Exit Ar Ion Polishing

Nanotechnology
Mechanics of MaterialsElectronic EngineeringMechanical EngineeringMaterials ScienceNanoscienceElectricalBioengineeringNanotechnologyChemistry
2011English

Radiation Damage of Semiconductor Detectors

RADIOISOTOPES
1973English

Carrier Conduction Mechanism for Phosphorescent Material Doped Organic Semiconductor

Journal of Applied Physics
AstronomyPhysics
2009English

Taylor-SPH Method for Viscoplastic Damage Material

Applied and Computational Mathematics
2015English

Appendix B: Prediction of ESD Damage Level for a Semiconductor Junction

English

Scanning Tunneling Microscopy(STM). Application for Material Science. Metal on Semiconductor.

Nihon Kessho Gakkaishi
1993English

Subsurface Facility System Description Document

2001English

Semiconductor Damage From Inert and Molecular Gas Plasmas

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
1992English

Bonding System of Semiconductor.

HYBRIDS
1989English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy