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New Erase Verify Scheme for Improving the Cycling Endurance of 2xnm NAND Flash Cell
doi 10.7567/ssdm.2012.b-2-1
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Date
September 25, 2012
Authors
J. Kim
T. Youn
S. Seo
N. Park
S. Yi
E. Park
H. Kim
H. Yang
K. Noh
S. Park
S. Lee
Publisher
The Japan Society of Applied Physics
