Amanote Research

Amanote Research

    RegisterSign In

Impact of Gamma Radiation on Dynamic RDSON Characteristics in AlGaN/GaN Power HEMTs

Materials - Switzerland
doi 10.3390/ma12172760
Full Text
Open PDF
Abstract

Available in full text

Categories
Materials ScienceCondensed Matter Physics
Date

August 28, 2019

Authors
Pedro J. MartínezEnrique MasetPedro Martín-HolgadoYolanda MorillaDavid GilabertEsteban Sanchis-Kilders
Publisher

MDPI AG


Related search

A Drain-Lag Model for AlGaN/GaN Power HEMTs

IEEE MTT-S International Microwave Symposium Digest
Electronic EngineeringRadiationElectricalCondensed Matter Physics
2007English

Effect of GaN Growth Pressure on the Device Characteristics of AlGaN/ GaN HEMTs on Silicon

2009English

Hydrodynamic Modeling of AlGaN/GaN HEMTs

English

Breakdown Mechanism in AlGaN/GaN HEMTs on Si Substrate

2010English

Enhancement Mode Power Switching AlGaN HEMTs

2013English

Field Plated AlGaN/GaN-on-Si HEMTs for High Voltage Switching Applications

Journal of the Korean Physical Society
AstronomyPhysics
2011English

High-Voltage AlGaN/GaN HEMTs on Si Substrate With Implant Isolation

2011English

43W, 52% PAE X-Band AlGaN/GaN HEMTs MMIC Amplifiers

2010English

Effects of High-Temperature AIN Buffer on the Microstructure of AlGaN/GaN HEMTs

Semiconductors
Condensed Matter PhysicsOpticsMolecular Physics,OpticalAtomicMagnetic MaterialsElectronic
2013English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2026 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy