Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power Diodes

IEEE Transactions on Nuclear Science - United States
doi 10.1109/tns.2019.2947866
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Related search

Junction Investigation of Graphene/Silicon Schottky Diodes

Nanoscale Research Letters
Materials ScienceNanotechnologyCondensed Matter PhysicsNanoscience
2012English

Ultralow Reverse Leakage Current in AlGaN/GaN Lateral Schottky Barrier Diodes Grown on Bulk GaN Substrate

Applied Physics Express
EngineeringAstronomyPhysics
2016English

Combined Thermionic Emission and Tunneling Mechanisms for the Analysis of the Leakage Current for Ga2O3 Schottky Barrier Diodes

SN Applied Sciences
2019English

Polishing Silicon Modification Layer on Silicon Carbide Surface by Ion Beam Figuring

Chinese Optics Letters
Electronic EngineeringOpticsMolecular Physics,OpticalElectricalAtomicMagnetic MaterialsElectronic
2014English

Large Reduction of Leakage Currents in AlGaN Schottky Diodes by a Surface Control Process and Its Mechanism

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2006English

Silicon Carbide as a Photoconductive Switch Material for High Power Applications

English

Unifying Leakage Models: From Probing Attacks to Noisy Leakage

Journal of Cryptology
Applied MathematicsComputer Science ApplicationsSoftware
2018English

Shot-Noise Suppression in Schottky Barrier Diodes

Journal of Applied Physics
AstronomyPhysics
2000English

Modelling and Optimization of Subthreshold Leakage Current in Low-Power, Silicon-Based, Complementary Metal Oxide Semiconductor (Cmos) Devices

International Journal of Engineering Applied Sciences and Technology
2019English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy