Low-Dielectric Constant SiCN Charge Trapping Layer for Nonvolatile Memory Applications

ECS Transactions - United States
doi 10.1149/05805.0081ecst
Full Text
Abstract

Available in full text

Categories
Engineering
Date
Authors
Publisher

The Electrochemical Society

Related search

Defect States and Charge Trapping Characteristics of HfO2 Films for High Performance Nonvolatile Memory Applications

Applied Physics Letters
AstronomyPhysics
2014English

Mo-Doped La2O3 as Charge-Trapping Layer for Improved Low-Voltage Flash-Memory Performance

ECS Solid State Letters
2013English

Plasmonic and High Dielectric Constant Nanostructures for Light Trapping

2011English

Nanoimaging of Organic Charge Retention Effects: Implications for Nonvolatile Memory, Neuromorphic Computing, and High Dielectric Breakdown Devices

English

A QFN Packaged Grid Array Antenna in Low Dielectric Constant LTCC for D-Band Applications

2016English

Anomalously Low Dielectric Constant of Confined Water

Science
MultidisciplinaryPhilosophy of ScienceHistory
2018English

Pi-Shape Gate Polycrystalline Silicon Thin-Film Transistor for Nonvolatile Memory Applications

Applied Physics Letters
AstronomyPhysics
2007English

Trapping of Dielectric Particles With Light-Induced Space-Charge Fields

Applied Physics Letters
AstronomyPhysics
2007English

Dielectric Relaxation in Polyimide Nanofoamed Films With Low Dielectric Constant

Applied Physics Letters
AstronomyPhysics
2008English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy