Mo-Doped La2O3 as Charge-Trapping Layer for Improved Low-Voltage Flash-Memory Performance

ECS Solid State Letters
doi 10.1149/2.006311ssl
Full Text
Abstract

Available in full text

Date
Authors
Publisher

The Electrochemical Society

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy