Plasma MBE Growth Conditions of AlGaN/GaN High-Electron-Mobility Transistors on Silicon and Their Device Characteristics With Epitaxially Regrown Ohmic Contacts
Applied Physics Express - Japan
doi 10.7567/apex.7.105501
Full Text
Open PDFAbstract
Available in full text
Date
September 11, 2014
Authors
Publisher
Japan Society of Applied Physics