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Publications by Č. Paškevič

Electron Transport in Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures in High Electric Fields

Acta Physica Polonica A

English

Related publications

Electroluminescence of Composite Channel InAlAs/InGaAs/InP/InAlAs High Electron Mobility Transistor

Journal of Applied Physics

English

High-Resolution STEM Study of InGaAs/InAlAs and Si/Ge Heterostructures

Acta Crystallographica Section A Foundations of Crystallography

English

Admittance Spectroscopy of InAlAs/InGaAs Single‐quantum‐well Structure With High Concentration of Electron Traps in InAlAs Layers

Journal of Applied Physics

English

Magnetooptical Study of Zeeman Effect in Mn Modulation-Doped InAs/InGaAs/InAlAs Quantum Well Structures

Journal of Applied Physics

English

Inverted InAlAs/InGaAs Avalanche Photodiode With Low–High–Low Electric Field Profile

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

English

Monte Carlo Study of Kink Effect in Short-Channel InAlAs/InGaAs High Electron Mobility Transistors

Journal of Applied Physics

English

Growth and Properties of InGaAs/FeAl/InAlAs/InP Heterostructures for Buried Reflector/Interconnect Applications in InGaAs Thermophotovoltaic Devices

English

Anisotropic Spin Interference in InGaAs/InAlAs Rectangular Loop Arrays

Physica E: Low-Dimensional Systems and Nanostructures

Condensed Matter Physics

Molecular Physics,

Magnetic Materials

English

ErAs:(InGaAs)1−x(InAlAs)x Alloy Power Generator Modules

Applied Physics Letters

English