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Publications by В.B. Козловский

Низкотемпературный Отжиг Слаболегированных Слоев N-4h-SiC После Облучения Быстрыми Электронами

Журнал технической физики

English

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Deep Levels in Iron Doped N- And P-Type 4h-SiC

Journal of Applied Physics

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Metastable Defects in Low-Energy Electron Irradiated N-Type 4h-SiC

Materials Science Forum

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Minority Carrier Trap in N-Type 4H–SiC Schottky Barrier Diodes

Materials Science

Inorganic Chemistry

Chemical Engineering

Condensed Matter Physics

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Microstructural Interpretation of Ni Ohmic Contact on N-Type 4H–SiC

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

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Major Deep Levels With the Same Microstructures Observed in N-Type 4H–SiC and 6H–SiC

Journal of Applied Physics

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О Пространственной Локализации Свободных Электронов В N-Канальных МОП-транзисторах На Основе 4h-SiC

Журнал технической физики

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Параметры Активности Нано- И Микропорошков Железа И Алюминия При Окислении В Воздухе После СВЧ Облучения

Журнал технической физики

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Vertical Conduction Mechanism of the Epitaxial Graphene/N-Type 4h-SiC Heterojunction at Cryogenic Temperatures

Applied Physics Letters

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TEM Characterisation of Silicide Phase Formation in Ni-Based Ohmic Contacts to 4H N-SiC

Materials Transactions

Mechanics of Materials

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Condensed Matter Physics

Mechanical Engineering

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