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Publications by A. Krysa
Temperature Dependence of Breakdown and Avalanche Multiplication in in/Sub 0.53/Ga/Sub 0.47/as Diodes and Heterojunction Bipolar Transistors
IEEE Transactions on Electron Devices
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Related publications
Low Multiplication Noise Thin Al/Sub 0.6/Ga/Sub 0.4/as Avalanche Photodiodes
IEEE Transactions on Electron Devices
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Huge Anisotropic Magnetoresistance in Epitaxial Sm[sub 0.53]Sr[sub 0.47]MnO[sub 3] Thin Films
Индуцированный Фазовый Переход В Прозрачной Керамике PbMg-=SUB=-1/3-=/SUB=-Nb-=SUB=-2/3-=/SUB=-O-=SUB=-3-=/SUB=--xPb(Zr-=SUB=-0.53-=/SUB=-Ti-=SUB=-0.47-=/SUB=-)O-=SUB=-3-=/SUB=-
Журнал технической физики
Кинетика Процесса Поляризации В Прозрачной Керамике Pb(Mg-=sub=-1/3-=/SUB=-Nb-=SUB=-2/3-=/Sub=-)O-=sub=-3-=/SUB=--23Pb(Zr-=SUB=-0.53-=/SUB=-Ti-=SUB=-0.47-=/Sub=-)O-=sub=-3-=/Sub=-
Журнал технической физики
In0.49Ga0.51P/GaAs Heterojunction Bipolar Transistors (HBTs) on 200 Mm Si Substrates: Effects of Base Thickness, Base and Sub-Collector Doping Concentrations
AIP Advances
Nanotechnology
Astronomy
Physics
Nanoscience
Program to Study the Process Parameters of OMVPE and Their Relationship to the Properties of Ga(0.47)In(0.53)As ON InP Substrates
Large Signal Characterization and Modeling of Heterojunction Bipolar Transistors
Квантовые Точки InAs, Выращенные В Метаморфной Матрице in-=sub=-0.25-=/SUB=-Ga-=SUB=-0.75-=/SUB=-As Методом МОС-гидридной Эпитаксии
Журнал технической физики
Nonlinearities in the Base Emitter Junction of Heterojunction Bipolar Transistors
