Amanote Research
Register
Sign In
Discover open access scientific publications
Search, annotate, share and cite publications
Publications by Arito Ogawa
Effects of Aluminum and Nitrogen Profile Control on Electrical Properties of HfAlON Gate Dielectric MOSFETs
Related publications
Frequency and Gate Voltage Effects on the Dielectric Properties and Electrical Conductivity of Al/SiO2/P-Si Metal-Insulator-Semiconductor Schottky Diodes
Journal of Applied Physics
Astronomy
Physics
Electrical Characteristics and Reliability Properties of Metal-Oxide-Semiconductor Field-Effect Transistors With La2O3 Gate Dielectric
Journal of Applied Physics
Astronomy
Physics
Electrical Conduction and Dielectric Breakdown in Aluminum Oxide Insulators on Silicon
IEEE Transactions on Electron Devices
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Improved Electrical Properties of Metal-Oxide-Semiconductor Capacitor With HfTiON Gate Dielectric by Using HfSiON Interlayer
Applied Physics Letters
Astronomy
Physics
Sub-Micron, Metal Gate, High-к Dielectric, Implant-Free, Enhancement-Mode III-V Mosfets
Effects of Different Annealing Gases on Pentacene OTFT With HfLaO Gate Dielectric
IEEE Electron Device Letters
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Improved Electrical Properties of Ge Metal-Oxide-Semiconductor Capacitor With HfTa-based Gate Dielectric by Using TaOxNy Interlayer
Applied Physics Letters
Astronomy
Physics
Influence of Physical and Geometrical Parameters on Electrical Properties of Short Gate GaAs MESFETs
Semiconductor Physics, Quantum Electronics and Optoelectronics
Electronic Engineering
Optics
Molecular Physics,
Optical
Electrical
Atomic
Magnetic Materials
Electronic
Electrical Properties of Crystalline YSZ Films on Silicon as Alternative Gate Dielectrics
Semiconductor Science and Technology
Electronic Engineering
Condensed Matter Physics
Optical
Materials Chemistry
Electrical
Magnetic Materials
Electronic