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Publications by Beatriz Galiana

Te Doping of GaAs Using Metalorganic Vapor Phase Epitaxy: Volatile Versus Nonvolatile Behavior

Journal of Applied Physics

English

Related publications

Carbon Doping of InAlAs Layers Grown by Metalorganic Vapor Phase Epitaxy

Brazilian Journal of Physics

English

Catalyst-Free Growth of GaAs Nanowires by Selective-Area Metalorganic Vapor-Phase Epitaxy

Applied Physics Letters

English

Characterization of Heavily Carbon‐doped GaAs Grown by Metalorganic Chemical Vapor Deposition and Metalorganic Molecular Beam Epitaxy

Journal of Applied Physics

English

Effect of Graded-Temperature Arsenic Prelayer on Quality of GaAs on Ge/Si Substrates by Metalorganic Vapor Phase Epitaxy

Applied Physics Letters

English

Enhanced Sb Incorporation in InAsSb Nanowires Grown by Metalorganic Vapor Phase Epitaxy

Applied Physics Letters

English

GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy

MRS Internet Journal of Nitride Semiconductor Research

English

Transformation of InAs Islands to Quantum Ring Structures by Metalorganic Vapor Phase Epitaxy

Mechanics of Materials

Electronic Engineering

Mechanical Engineering

Materials Science

English

Incorporation of Zn in GaAs During Organometallic Vapor Phase Epitaxy Growth Compared to Equilibrium

Journal of Applied Physics

English

Residual Doping in Homoepitaxial Zinc Oxide Layers Grown by Metal Organic Vapor Phase Epitaxy

Applied Physics Express

English