Amanote Research
Register
Sign In
Discover open access scientific publications
Search, annotate, share and cite publications
Publications by Bengt Gunnar Malm
500$^{\circ}{\rm C}$ Bipolar Integrated OR/NOR Gate in 4h-SiC
IEEE Electron Device Letters
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Total Dose Effects on 4h-SiC Bipolar Junction Transistors
Materials Science Forum
Related publications
Wide Temperature Range Integrated Bandgap Voltage References in 4H–SiC
IEEE Electron Device Letters
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
4h-SiC/Si Heterojunction Bipolar Transistors Fabricated by Surface Activated Bonding
ECS Solid State Letters
Enhanced Drain Current of 4h-SiC MOSFETs by Adopting a Three-Dimensional Gate Structure
IEEE Transactions on Electron Devices
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Threshold-Voltage Instability in 4h-SiC MOSFETs With Nitrided Gate Oxide Revealed by Non-Relaxation Method
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
Thermoresistance of P -Type 4h-SiC Integrated MEMS Devices for High-Temperature Sensing
Advanced Engineering Materials
Materials Science
Condensed Matter Physics
LACBED Analysis of Threading Dislocation With C+a Burgers Vector in 4h-SiC
Forward Voltage Degradation of 4h-SiC Pin Diodes and High Voltage 4h-SiC Pin Diodes on the (000-1) C-Face With Reduced Forward Degradation
IEEJ Transactions on Industry Applications
Electronic Engineering
Industrial
Electrical
Manufacturing Engineering
Incipient Plasticity in 4h-SiC During Quasistatic Nanoindentation
Journal of the Mechanical Behavior of Biomedical Materials
Mechanics of Materials
Biomedical Engineering
Biomaterials
