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Publications by C. Möhle

1/ F and RTS Noise in InGaAs Nanowire MOSFETs

Microelectronic Engineering
SurfacesElectronic EngineeringCondensed Matter PhysicsElectronicMolecular Physics,NanoscienceOpticalElectricalAtomicMagnetic MaterialsFilmsNanotechnologyOpticsCoatings
2017English

Related publications

1∕f Noise of SnO2 Nanowire Transistors

Applied Physics Letters
AstronomyPhysics
2008English

Low-Frequency Noise in III-V Nanowire TFETs and MOSFETs

IEEE Electron Device Letters
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2017English

Sub-10-Nm-Diameter InGaAs Vertical Nanowire MOSFETs: Ni Versus Mo Contacts

IEEE Transactions on Electron Devices
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2018English

Gate Voltage Dependent 1/F Noise Variance Model in N-Channel MOSFETs

2014English

Semiconductor Nanowire MOSFETs and Applications

2017English

InGaAs Nanowire MOSFETs With ION = 555 µA/µm at IOFF = 100 nA/µm and VDD = 0.5 V

2016English

Temperature Dependence of 1/F Noise Mechanisms in Silicon Nanowire Biochemical Field Effect Transistors

Applied Physics Letters
AstronomyPhysics
2010English

Vertical InAs/InGaAs Heterostructure MOSFETs on Si

Nano Letters
Materials ScienceCondensed Matter PhysicsMechanical EngineeringNanoscienceBioengineeringNanotechnologyChemistry
2017English

Effect of Nitridation on Low-Frequency (1/F) Noise in N- And P-Mosfets With HFO[sub 2] Gate Dielectrics

Journal of the Electrochemical Society
SurfacesCondensed Matter PhysicsOpticalElectrochemistrySustainabilityMaterials ChemistryMagnetic MaterialsRenewable EnergyFilmsCoatingsElectronicthe Environment
2006English

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