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Publications by Felix P. Lu

Band Discontinuity Measurements of the Wafer Bonded InGaAs∕Si Heterojunction

Applied Physics Letters

English

Related publications

Analysis of a Wafer Bonded Ge∕Si Heterojunction by Transmission Electron Microscopy

Applied Physics Letters

English

Energy Band Diagram of NiO: Lu2 O3/N-Si Heterojunction

Iraqi Journal of Science

Molecular Biology

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First Principles Calculations of Band Discontinuity at Ultrathin SiO2/Si Interfaces

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N+ InGaAs/nGaAs Heterojunction Schottky Diodes With Low Barriers Controlled by Band Offset and Doping Level

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

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Si Wafer Bonded of A‐Si∕a‐SiNx Distributed Bragg Reflectors for 1.55‐μm-Wavelength Vertical Cavity Surface Emitting Lasers

Journal of Applied Physics

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Reduction of Thermal Conductivity in Wafer-Bonded Silicon

Applied Physics Letters

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Vertical InAs/InGaAs Heterostructure MOSFETs on Si

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Condensed Matter Physics

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TCO-Si Based Heterojunction Photovoltaic Devices

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Integrated Waveguide PIN Photodiodes Exploiting Lateral Si/Ge/Si Heterojunction

Molecular Physics,

English