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Publications by Fredrik Lindelow
InGaAs Nanowire MOSFETs With ION = 555 µA/µm at IOFF = 100 nA/µm and VDD = 0.5 V
Related publications
1/ F and RTS Noise in InGaAs Nanowire MOSFETs
Microelectronic Engineering
Surfaces
Electronic Engineering
Condensed Matter Physics
Electronic
Molecular Physics,
Nanoscience
Optical
Electrical
Atomic
Magnetic Materials
Films
Nanotechnology
Optics
Coatings
Vertical InAs Nanowire MOSFETs With IDS = 1.34 mA/µm and Gm = 1.19 mS/µm at VDS = 0.5 V
Sub-10-Nm-Diameter InGaAs Vertical Nanowire MOSFETs: Ni Versus Mo Contacts
IEEE Transactions on Electron Devices
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
MIPAS Database: New HNO3 Line Parameters at 7.6 &Thinsp;µm Validated With MIPAS Satellite Measurements
Atmospheric Measurement Techniques
Atmospheric Science
Low-Frequency Noise in III-V Nanowire TFETs and MOSFETs
IEEE Electron Device Letters
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Figure 7: Effects of Different Lengths of 10 µM PNU-120596 Preincubation on Currents Evoked by Coapplied Choline and 1 µM A-867744.
Semiconductor Nanowire MOSFETs and Applications
Kaolinite Particle Sizes in the <2 µM Range Using Laser Scattering
Clays and Clay Minerals
Planetary Sciences
Petrology
Geochemistry
Soil Science
Earth
Water Science
Technology
Vertical InAs/InGaAs Heterostructure MOSFETs on Si
Nano Letters
Materials Science
Condensed Matter Physics
Mechanical Engineering
Nanoscience
Bioengineering
Nanotechnology
Chemistry
