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Publications by G. E. Höfler

Characterization of Heavily Carbon‐doped GaAs Grown by Metalorganic Chemical Vapor Deposition and Metalorganic Molecular Beam Epitaxy

Journal of Applied Physics

English

Related publications

Carbon Doping of InAlAs Layers Grown by Metalorganic Vapor Phase Epitaxy

Brazilian Journal of Physics

English

1.24 Μm InGaAs/GaAs Quantum Dot Laser Grown by Metalorganic Chemical Vapor Deposition Using Tertiarybutylarsine

Applied Physics Letters

English

Electron and Hole Traps in N-Doped ZnO Grown on P-Type Si by Metalorganic Chemical Vapor Deposition

Journal of Applied Physics

English

Effect of Strain-Compensation in Stacked 1.3μm InAs∕GaAs Quantum Dot Active Regions Grown by Metalorganic Chemical Vapor Deposition

Applied Physics Letters

English

GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy

MRS Internet Journal of Nitride Semiconductor Research

English

Catalyst-Free Growth of GaAs Nanowires by Selective-Area Metalorganic Vapor-Phase Epitaxy

Applied Physics Letters

English

Enhanced Sb Incorporation in InAsSb Nanowires Grown by Metalorganic Vapor Phase Epitaxy

Applied Physics Letters

English

Plasma-Etching-Enhanced Deep Centers in N-GaN Grown by Metalorganic Chemical-Vapor Deposition

Applied Physics Letters

English

High Optical Quality Polycrystalline Indium Phosphide Grown on Metal Substrates by Metalorganic Chemical Vapor Deposition

Journal of Applied Physics

English