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Publications by H-P D Yang

Characteristics of MOCVD- And MBE-grown InGa(N)As VCSELs

Semiconductor Science and Technology
Electronic EngineeringCondensed Matter PhysicsOpticalMaterials ChemistryElectricalMagnetic MaterialsElectronic
2005English

Related publications

Thermoelectric Characteristics in MBE-Grown HgCdTe-Based Superlattices

Journal of Electronic Materials
Electronic EngineeringCondensed Matter PhysicsOpticalMaterials ChemistryElectricalMagnetic MaterialsElectronic
2008English

P- And N-Type Doping of MBE Grown Cubic GaN/GaAs Epilayers

MRS Internet Journal of Nitride Semiconductor Research
1999English

Segregation in InGaAs/GaAs Quantum Wells: MOCVD Versus MBE

Microscopy and Microanalysis
Instrumentation
2003English

Dirac’s HdCdTe Semimetals Grown by MBE Technology

EPJ Web of Conferences
AstronomyPhysics
2016English

Structural Investigation of MOCVD Grown GaSb Islands by TEM

Acta Crystallographica Section A Foundations of Crystallography
2000English

Doping of High-Al-Content AlGaN Grown by MOCVD

2014English

HAADF-STEM Study of MBE-Grown Dirac Semimetal Cd3As2

Microscopy and Microanalysis
Instrumentation
2017English

Microstructure of GaN Grown on (111) Si by MOCVD

MRS Internet Journal of Nitride Semiconductor Research
1999English

Anomalous Behavior of Electrically Active Defects Near EC−0.5 eV in MOCVD, As-Grown GaN

AIP Advances
NanotechnologyAstronomyPhysicsNanoscience
2019English

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