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Publications by H. Fatima

Maximum Current in Nitride-Based Heterostructure Field-Effect Transistors

Applied Physics Letters
AstronomyPhysics
2002English

Related publications

Simulation of Gate Lag and Current Collapse in Gallium Nitride Field-Effect Transistors

Applied Physics Letters
AstronomyPhysics
2004English

Si3N4/AlGaN/GaN–metal–insulator–semiconductor Heterostructure Field–effect Transistors

Applied Physics Letters
AstronomyPhysics
2001English

7.5 kW/mm2 Current Switch Using AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC Substrates

Electronics Letters
Electronic EngineeringElectrical
2000English

Field Effect Transistors

2013English

Field Effect Transistors

2016English

Field Effect Transistors: Ionic-Liquid Gating of InAs Nanowire-Based Field-Effect Transistors (Adv. Funct. Mater. 3/2019)

Advanced Functional Materials
Materials ScienceCondensed Matter PhysicsElectrochemistryNanoscienceOpticalBiomaterialsMagnetic MaterialsNanotechnologyChemistryElectronic
2019English

Durable Chemical Sensors Based on Field-Effect Transistors

Sensors and Actuators, B: Chemical
SurfacesElectronic EngineeringAlloysCondensed Matter PhysicsInstrumentationMaterials ChemistryMetalsOpticalElectricalMagnetic MaterialsFilmsCoatingsElectronic
1995English

Mechanism of Radio-Frequency Current Collapse in GaN–AlGaN Field-Effect Transistors

Applied Physics Letters
AstronomyPhysics
2001English

Carrier Mobility in Field-Effect Transistors

2017English

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