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Publications by H. Sazawa

Effective AlN-passivation for Improving ALD-Al2O3/GaAs Interface in MOS Structures Using MOCVD

English

Related publications

Sulfur Passivation Effect on HfO2/GaAs Interface: A First-Principles Study

Applied Physics Letters

English

Sharp Interfaces in P+-AlGaAs/N-GaAs Epitaxial Structures Obtained by MOCVD

Технология и конструирование в электронной аппаратуре

English

Interface Properties of MOS Structures Prepared by Reactive Sputtering

English

Physical and Electrical Properties of MOCVD and ALD Deposited HfZrO

English

Capacitance-Voltage Characterization of Atomic-Layer-Deposited Al2O3/InGaAs and Al2O3/GaAs Metal-Oxide-Semiconductor Structures

English

Dual Passivation of GaAs (110) Surfaces Using O2/H2o and Trimethylaluminum

Journal of Chemical Physics

Theoretical Chemistry

English

Fabrication of Ge-Mos Capacitors With High-Quality Interface by Ultra-Thin SiO2/GeO2 Bi-Layer Passivation

English

Segregation in InGaAs/GaAs Quantum Wells: MOCVD Versus MBE

Microscopy and Microanalysis

Instrumentation

English

Droplet-Induced Dot, Dot-In-Hole, and Hole Structures in GaGe Thin Films Grown by MOCVD on GaAs Substrates

Materials Science

Condensed Matter Physics

English