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Publications by H.C. Lin
Capacitance-Voltage Characterization of Atomic-Layer-Deposited Al2O3/InGaAs and Al2O3/GaAs Metal-Oxide-Semiconductor Structures
Dynamic Inelastic Response of Thick Shells Using Endochronic Theory and the Method of Nearcharacteristics. [LMFBR]
Related publications
Silicon Diffusion Control in Atomic-Layer-Deposited Al2O3/La2O3/Al2O3 Gate Stacks Using an Al2O3 Barrier Layer
Nanoscale Research Letters
Materials Science
Nanotechnology
Condensed Matter Physics
Nanoscience
Excellent Resistive Switching Properties of Atomic Layer-Deposited Al2O3/HfO2/Al2O3 Trilayer Structures for Non-Volatile Memory Applications
Nanoscale Research Letters
Materials Science
Nanotechnology
Condensed Matter Physics
Nanoscience
Silicon Surface Passivation by Atomic Layer Deposited Al2O3
Journal of Applied Physics
Astronomy
Physics
Radiation and Bias Switch-Induced Charge Dynamics in Al2O3-Based Metal-Oxide-Semiconductor Structures
Journal of Applied Physics
Astronomy
Physics
Effect of Substrate Pretreatments on the Atomic Layer Deposited Al2O3 Passivation Quality
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Surfaces
Films
Interfaces
Condensed Matter Physics
Coatings
Atomic Layer Deposited HfO2 Based Metal Insulator Semiconductor GaN Ultraviolet Photodetectors
Current Applied Physics
Materials Science
Astronomy
Physics
Comparative Investigation of Endurance and Bias Temperature Instability Characteristics in Metal-Al2O3-Nitride-Oxide-Semiconductor (MANOS) and Semiconductor-Oxide-Nitride-Oxide-Semiconductor (SONOS) Charge Trap Flash Memory
Journal of Semiconductor Technology and Science
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Interface Effect on Dielectric Constant of HfO2∕Al2O3 Nanolaminate Films Deposited by Plasma-Enhanced Atomic Layer Deposition
Applied Physics Letters
Astronomy
Physics
Investigation of Atomic Layer Deposited Metal Oxide Layers for Conservation of Metal Cultural Heritage Objects*
Microscopy and Microanalysis
Instrumentation
