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Publications by Hongmiao Gao
Retraction: “Nucleation-Controlled Low-Temperature Solid-Phase Crystallization for Sn-Doped Polycrystalline-Ge Film on Insulator With High Carrier Mobility (∼550 Cm2/v S)” [Appl. Phys. Lett. 112, 242103 (2018)]
Applied Physics Letters
Astronomy
Physics
Related publications
Improving Carrier Mobility of Polycrystalline Ge by Sn Doping
Scientific Reports
Multidisciplinary
Publisher's Note: “Low Intrinsic Carrier Density LSMO/Alq3/AlOx/Co Organic Spintronic Devices” [Appl. Phys. Lett. 112, 142401 (2018)]
Applied Physics Letters
Astronomy
Physics
High Hole Mobility (≥500 Cm2 V−1 S−1) Polycrystalline Ge Films on GeO2-coated Glass and Plastic Substrates
Applied Physics Express
Engineering
Astronomy
Physics
Publisher's Note: “The Influence of Texture on the Reversible Elastocaloric Effect of a Polycrystalline Ni50Mn32In16Cr2 Alloy” [Appl. Phys. Lett. 112, 164101 (2018)]
Applied Physics Letters
Astronomy
Physics
Retraction: “Functional Characteristics in Asymmetric Source/Drain InAlAsSb∕InGaAs∕InP Δ-Doped High Electron Mobility Transistor” [Appl. Phys. Lett. 86, 033505 (2005)]
Applied Physics Letters
Astronomy
Physics
Erratum: “High Performance InGaZnO Thin-Film Transistors With High-K Amorphous Ba0.5Sr0.5TiO3 Gate Insulator” [Appl. Phys. Lett. 93, 242111 (2008)]
Applied Physics Letters
Astronomy
Physics
Low Temperature Electron Mobility Exceeding 104 Cm2/v S in MOCVD Grown Β-Ga2O3
APL Materials
Materials Science
Engineering
Erratum: “A Flexible Optically Re-Writable Color Liquid Crystal Display” [Appl. Phys. Lett. 112, 131902 (2018)]
Applied Physics Letters
Astronomy
Physics
Publisher's Note: “Measurement of Surface Tension by Sessile Drop Tensiometer With Superoleophobic Surface” [Appl. Phys. Lett. 112, 121602 (2018)]
Applied Physics Letters
Astronomy
Physics
