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Publications by J. F. Kang

Ultrathin HfO[sub 2](EOT<0.75 Nm) Gate Stack With TaN∕HfN Electrodes Fabricated Using a High-Temperature Process

Electrochemical and Solid-State Letters

English

Related publications

Ge MOS Capacitors With Thermally Evaporated HfO[sub 2] as Gate Dielectric

Journal of the Electrochemical Society

Condensed Matter Physics

Electrochemistry

Materials Chemistry

Magnetic Materials

Renewable Energy

the Environment

English

Comprehensive Understanding of PBTI and NBTI Reliability of High-K / Metal Gate Stacks With EOT Scaling to Sub-1nm

English

Degradation and Breakdown of Sub-1nm EOT HfO2/Metal Gate Stacks

English

Crystal Phase Distribution and Ferroelectricity in Ultrathin HfO 2 –ZrO 2 Bilayers

Physica Status Solidi (B): Basic Research

Condensed Matter Physics

Magnetic Materials

English

Effect of Nitridation on Low-Frequency (1/F) Noise in N- And P-Mosfets With HFO[sub 2] Gate Dielectrics

Journal of the Electrochemical Society

Condensed Matter Physics

Electrochemistry

Materials Chemistry

Magnetic Materials

Renewable Energy

the Environment

English

InGaAs Tunnel FET With Sub-Nanometer EOT and Sub-60 mV/dec Sub-Threshold Swing at Room Temperature

Applied Physics Letters

English

A Resistorless Voltage Reference With High-Order Temperature Curvature Compensation in 55 Nm CMOS Process

English

Size and Shape Control of Sub-20 Nm Patterns Fabricated Using Focused Electron Beam-Induced Processing

Journal of Micro/ Nanolithography, MEMS, and MOEMS

Electronic Engineering

Condensed Matter Physics

Mechanical Engineering

Molecular Physics,

Magnetic Materials

English

High Reliability Ultrathin Interpolyoxynitride Dielectrics Prepared by N[sub 2]O Plasma Annealing

Journal of the Electrochemical Society

Condensed Matter Physics

Electrochemistry

Materials Chemistry

Magnetic Materials

Renewable Energy

the Environment

English