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Publications by J. M. Redwing
High Voltage (450 V) GaN Schottky Rectifiers
Applied Physics Letters
Astronomy
Physics
Dependence of Ni/AlGaN Schottky Barrier Height on Al Mole Fraction
Journal of Applied Physics
Astronomy
Physics
Related publications
High Current and High Voltage Silicon Controlled Rectifiers
GaN-Based Schottky Diode
GaN Schottky Barrier Photodetectors With SiN∕GaN Nucleation Layer
Applied Physics Letters
Astronomy
Physics
Enhancement-Mode Metal–insulator–semiconductor GaN/AlInN/GaN Heterostructure Field-Effect Transistors on Si With a Threshold Voltage of +3.0 v and Blocking Voltage Above 1000 V
Applied Physics Express
Engineering
Astronomy
Physics
Vertical GaN Schottky Diodes Grown on Highly Conductive Ammono-GaN Substrate
Acta Physica Polonica A
Astronomy
Physics
Low Cost High Voltage GaN Polarization Superjunction Field Effect Transistors
Physica Status Solidi (A) Applications and Materials Science
Surfaces
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
Films
Coatings
Electronic
Interfaces
High Voltage Diffusion-Welded Stacks on the Basis of SiC Schottky Diodes
Materials Science Forum
The World’s First High Voltage GaN-on-Diamond Power Semiconductor Devices
Solid-State Electronics
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
Electronic
High-Voltage AlGaN/GaN HEMTs on Si Substrate With Implant Isolation
