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Publications by James P. Ibbetson
Charge Control and Mobility in AlGaN/GaN Transistors: Experimental and Theoretical Studies
Journal of Applied Physics
Astronomy
Physics
Related publications
Studies of Traps in AlGaN/GaN High Electron Mobility Transistors on Silicon
Prostate Specific Antigen Detection Using AlGaN∕GaN High Electron Mobility Transistors
Applied Physics Letters
Astronomy
Physics
Excess Low-Frequency Noise in AlGaN/GaN-based High-Electron-Mobility Transistors
Applied Physics Letters
Astronomy
Physics
Study of Deep Traps in AlGaN/GaN High-Electron Mobility Transistors by Electrical Characterization and Simulation
Journal of Applied Physics
Astronomy
Physics
Thermal Properties of AlGaN/GaN High Electron Mobility Transistors on 4H and 6H SiC Substrates
Physica Status Solidi (A) Applications and Materials Science
Surfaces
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
Films
Coatings
Electronic
Interfaces
Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors
Zika Virus Detection Using Antibody-Immobilized Disposable Cover Glass and AlGaN/GaN High Electron Mobility Transistors
Applied Physics Letters
Astronomy
Physics
COMPARATIVE ANALYSIS OF AlGaN/GaN MICROWAVE TRANSISTORS
Electronic engineering. Series 2. Semiconductor device
Linearity Characteristics of Field-Plated AlGaN/GaN High Electron Mobility Transistors for Microwave Applications
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
