Amanote Research
Register
Sign In
Discover open access scientific publications
Search, annotate, share and cite publications
Publications by John W. Palmour
Переходной Процесс Выключения 4h-SiC Биполярного Транзистора Из Режима Глубокого Насыщения
Журнал технической физики
Related publications
Incipient Plasticity in 4h-SiC During Quasistatic Nanoindentation
Journal of the Mechanical Behavior of Biomedical Materials
Mechanics of Materials
Biomedical Engineering
Biomaterials
Total Dose Effects on 4h-SiC Bipolar Junction Transistors
Materials Science Forum
Neutron Radiation Effect on 4h-SiC MESFETs and SBDs
Journal of Semiconductors
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
Electronic
On the Site Occupancy of Dopants in 4h-SiC
Microscopy and Microanalysis
Instrumentation
Graphene Epitaxially Grown on Vicinal 4h-SiC(0001) Substrates
e-Journal of Surface Science and Nanotechnology
Surfaces
Mechanics of Materials
Condensed Matter Physics
Interfaces
Nanoscience
Bioengineering
Films
Biotechnology
Coatings
Nanotechnology
Nonlocal Effects in Thin 4h-SiC UV Avalanche Photodiodes
IEEE Transactions on Electron Devices
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Microscopic Raman Mapping of Epitaxial Graphene on 4h-SiC(0001)
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
Wide Temperature Range Integrated Bandgap Voltage References in 4H–SiC
IEEE Electron Device Letters
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Charge State Switching of the Divacancy Defect in 4H -SiC
Physical Review B
Optical
Electronic
Condensed Matter Physics
Magnetic Materials
