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Publications by K. Lefki
Comment on ‘‘Effect of Sub‐band‐gap Illumination on Β‐FeSi2/N‐type Si Diodes Under Reverse Bias’’
Applied Physics Letters
Astronomy
Physics
Related publications
Electric Properties of Carbon-Doped N-Type Β-FeSi2/P-Type Si Heterojunction Diodes
Investigation of Current Injection in Β-FeSi2/Si Double-Heterostructures Light-Emitting Diodes by Molecular Beam Epitaxy
Thin Solid Films
Surfaces
Alloys
Optical
Interfaces
Metals
Materials Chemistry
Magnetic Materials
Films
Coatings
Electronic
Comparison of Microstrip W-Band Detectors Based on Zero Bias Schottky-Diodes
Electronics (Switzerland)
Control
Electronic Engineering
Signal Processing
Computer Networks
Systems Engineering
Hardware
Communications
Electrical
Architecture
Enhancement of Photoluminescence From Cu-Doped Β-FeSi2/Si Heterostructures
DEVICE STRUCTURES BASED ON Β-FeSi2 (OVERVIEW)
Electronic engineering. Series 2. Semiconductor device
Influence of Zinc Concentration on Band Gap and Sub-Band Gap Absorption on ZnO Nanocrystalline Thin Films Sol-Gel Grown
Materials Science-Poland
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering
Reverse Gate Bias Stress on High-Voltage AlGaN/GaN-on-Si Heterostructure FETs
IRRADIATION EFFECT ON Er2O3/N-Si STRUCTURE UNDER HIGH GAMMA-RAY DOSE
A Comparative Study on Electrical Characteristics of Au/N-Si Schottky Diodes, With and Without Bi-Doped PVA Interfacial Layer in Dark and Under Illumination at Room Temperature
Journal of Nanomedicine & Nanotechnology
