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Publications by K.F. Yarn
Voltage-Controlled Three Terminal GaAs Negative Differential Resistance Device Using N+-I-P+-I-N+ Structure
IEE Proceedings G Circuits, Devices and Systems
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Low Vπ High-Speed GaAs Travelling-Wave Electrooptic Phase Modulators Using an N-I-P-N Structure
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Molecular Physics,
Sustainability
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the Environment
Their Interests Were Connected: I. P. Borodin and N. I. Vavilov
PROCEEDINGS ON APPLIED BOTANY, GENETICS AND BREEDING
Image and Color Recognition Using Amorphous Silicon P–i–n Photodiodes
Sensors and Actuators, A: Physical
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A-Si:H P–i–n Structures With Extreme I-Layer Thickness
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Electroluminescence On-Off Ratio Control of N−i−n GaAs/AlGaAs-based Resonant Tunneling Structures
Physical Review B
Optical
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Влияние Глубоких Уровней Дислокаций В Гетероэпитаксиальных InGaAs/GaAs И GaAsSb/GaAs P-I-N-Структурах На Время Релаксации Неравновесных Носителей
Журнал технической физики
Π Complexes of P^P and P^N Chelated Gold(I)
Chemical Communications
Surfaces
Alloys
Materials Chemistry
Coatings
Metals
Optical
Magnetic Materials
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Catalysis
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Composites
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Analysis of Deep Level Spectrum in GaAsp+-p-i-n-n+structures
