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Publications by L. Horiuchi
Growth and Characterization of GaAlAs/GaAs and GaInAs/InP Structures: The Effect of a Pulse Metalorganic Flow
Journal of Applied Physics
Astronomy
Physics
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Erratum: Metalorganic Molecular Beam Epitaxial Growth of InP/GaInAs Multiquantum Wells for Infrared Photodetection [Appl. Phys. Lett. 59, 552 (1991)]
Applied Physics Letters
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A GaAlAs-GaAs Integrated Coherence Modulator
Journal of Lightwave Technology
Optics
Atomic
Molecular Physics,
Characterization of Heavily Carbon‐doped GaAs Grown by Metalorganic Chemical Vapor Deposition and Metalorganic Molecular Beam Epitaxy
Journal of Applied Physics
Astronomy
Physics
Dynamics of Photoexcited Carriers in GaInAs/GaAs Quantum Dots
Acta Physica Polonica A
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GaInAs/GaAs Micro-Arc Ring Semiconductor Laser
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
Mechanical Deformation of InP and GaAs by Spherical Indentation
Applied Physics Letters
Astronomy
Physics
CCl4‐doped Semi‐insulating InP as a Buffer Layer in GaInAs/InP High Electron Mobility Transistors
Applied Physics Letters
Astronomy
Physics
Direct Growth of High-Quality InP Layers on GaAs Substrates by MOCVD
Active and Passive Electronic Components
Electronic Engineering
Optical
Electrical
Magnetic Materials
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Catalyst-Free Growth of GaAs Nanowires by Selective-Area Metalorganic Vapor-Phase Epitaxy
Applied Physics Letters
Astronomy
Physics