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Publications by L. M. Lin
Effects of NO Annealing and GaO[sub X]N[sub Y] Interlayer on GaN Metal-Insulator-Semiconductor Capacitor With SiO[sub 2] Gate Dielectric
Journal of the Electrochemical Society
Surfaces
Condensed Matter Physics
Optical
Electrochemistry
Sustainability
Materials Chemistry
Magnetic Materials
Renewable Energy
Films
Coatings
Electronic
the Environment
Related publications
Thermal Annealing Effects on the Structure and Electrical Properties of Al[sub 2]O[sub 3] Gate Dielectrics on Fully Depleted SiGe on Insulator
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Charge Density at the Al-=sub=-2-=/Sub=-O-=sub=-3-=/Sub=-/Si Interface in Metal-Insulator-Semiconductor Devices: Semiclassical and Quantum Mechanical Descriptions
Журнал технической физики
Efficient Electroluminescence From Rare-Earth Implanted SiO/sub 2/ Metal-Oxide-Semiconductor Structures
Структура И Электрические Свойства Тонких Пленок (ZnO/SiO-=SUB=-2-=/SUB=-)-=SUB=-25-=/SUB=-
Журнал технической физики
Импедансные Характеристики Γ-Облученных Твердых Растворов (TlGaSe-=SUB=-2-=/SUB=-)-=SUB=-1-x-=/SUB=-(TlInS-=SUB=-2-=/SUB=-)-=SUB=-x-=/SUB=-
Журнал технической физики
Высокотемпературная Теплоемкость Апатитов Pb-=sub=-10-X-=/SUB=-Nd-=SUB=-x-=/SUB=-(GeO-=SUB=-4-=/SUB=-)-=SUB=-2+x-=/SUB=-(VO)-=SUB=-4-x-=/Sub=- (X=0-3)
Журнал технической физики
Deposition of SiO[sub 2] Layers on GaN by Photochemical Vapor Deposition
Journal of the Electrochemical Society
Surfaces
Condensed Matter Physics
Optical
Electrochemistry
Sustainability
Materials Chemistry
Magnetic Materials
Renewable Energy
Films
Coatings
Electronic
the Environment
Improved Electrical Properties of Metal-Oxide-Semiconductor Capacitor With HfTiON Gate Dielectric by Using HfSiON Interlayer
Applied Physics Letters
Astronomy
Physics
Спектральные И Структурные Характеристики Вольфраматов (Lu-=sub=-1-X-=/SUB=-Eu-=SUB=-x-=/Sub=-)-=sub=-2-=/Sub=-(Wo-=sub=-4-=/Sub=-)-=sub=-3-=/Sub=-
Журнал технической физики
