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Publications by M. Shirazi-HD
Kinetic Instability of AlGaN Alloys During MBE Growth Under Metal-Rich Conditions on M-Plane GaN Miscut Towards the -C Axis
Journal of Applied Physics
Astronomy
Physics
Related publications
Plasma MBE Growth Conditions of AlGaN/GaN High-Electron-Mobility Transistors on Silicon and Their Device Characteristics With Epitaxially Regrown Ohmic Contacts
Applied Physics Express
Engineering
Astronomy
Physics
The Investigation of AlGaN/GaN HEMT Failure Mechanisms Under Different Temperature Conditions
GaN Avalanche Photodiodes Grown on M-Plane Freestanding GaN Substrate
Applied Physics Letters
Astronomy
Physics
Effect of GaN Growth Pressure on the Device Characteristics of AlGaN/ GaN HEMTs on Silicon
Polarization Effects in AlGaN/GaN and GaN/AlGaN/GaN Heterostructures
Journal of Applied Physics
Astronomy
Physics
Growth of Epitaxial ZnSnxGe1−xN2 Alloys by MBE
Scientific Reports
Multidisciplinary
Normally-Off AlGaN/GaN MIS-HFETs Using Non-Polar A-Plane
Si3N4/AlGaN/GaN–metal–insulator–semiconductor Heterostructure Field–effect Transistors
Applied Physics Letters
Astronomy
Physics
Base Transit Time in Abrupt GaN/InGaN/GaN and AlGaN/GaN/AlGaN HBTs
MRS Internet Journal of Nitride Semiconductor Research
