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Publications by Masashi Sasagawa

Interface Oxidation Mechanism in HfO2/Silicon System With Post-Deposition Annealing

English

Related publications

The Annealing Mechanism of the Radiation-Induced Vacancy-Oxygen Defect in Silicon

Journal of Applied Physics

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Crystallization Mechanism of Nanocrystalline Silicon Fabricated by Hydrogen Radical Annealing

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Interface Effect on Dielectric Constant of HfO2∕Al2O3 Nanolaminate Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Applied Physics Letters

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Pursuing a Clue to Reveal Mechanism of Silicon Oxidation

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Post-Deposition Catalytic-Doping of Microcrystalline Silicon Thin Layer for Application in Silicon Heterojunction Solar Cell

Thin Solid Films

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Oxidation of Ablated Silicon During Pulsed Laser Deposition in a Background Gas With Different Oxygen Partial Pressures

EPJ Web of Conferences

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Growth and Interface of HfO2 Films on H-Terminated Si From a TDMAH and H2O Atomic Layer Deposition Process

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

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Evolution of SiO2/Ge/HfO2(Ge) Multilayer Structure During High Temperature Annealing

Thin Solid Films

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Correction: Interface-Engineered Reliable HfO2-based RRAM for Synaptic Simulation

Journal of Materials Chemistry C

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