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Publications by Masataka YOSHIHARA
Correlation Between Filament Distribution and Resistive Switching Properties in ReRAM Consisting of Transition-Metal-Oxides
Journal of the Vacuum Society of Japan
Surfaces
Instrumentation
Interfaces
Spectroscopy
Materials Science
Related publications
A Physics-Based Model of Resistive Switching in Metal Oxides
Dependence of Reactive Metal Layer on Resistive Switching in a Bi-Layer Structure Ta/HfOx Filament Type Resistive Random Access Memory
Applied Physics Letters
Astronomy
Physics
Filament Formation and Erasure in Molybdenum Oxide During Resistive Switching Cycles
Applied Physics Letters
Astronomy
Physics
Approaches for Improving the Performance of Filament-Type Resistive Switching Memory
Chinese Science Bulletin
Interfacial Reactions and Resistive Switching Behaviors of Metal/NiO/Metal Structures
Applied Physics Letters
Astronomy
Physics
Defect Structure in Transition Metal Oxides.
Nihon Kessho Gakkaishi
Switching Mechanism of TaOx ReRAM
Postcycling Degradation in Metal-Oxide Bipolar Resistive Switching Memory
IEEE Transactions on Electron Devices
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Conducting Filament Engineering by Triple-Layer RRAM for Uniform Resistive Switching
