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Publications by Mika Nishisaka

Schottky Source/Drain SOI MOSFET With Shallow Doped Extension

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

English

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Characteristics of N-Type Asymmetric Schottky-Barrier Transistors With Silicided Schottky-Barrier Source and Heavily N-Type Doped Channel and Drain

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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Advantage of Plasma Doping for Source/Drain Extension in Bulk-FinFET

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Comparison of Raised and Schottky Source/Drain MOSFETs Using a Novel Tunneling Contact Model

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6-T SRAM Cell Design With Nanoscale Double-Gate SOI MOSFETs: Impact of Source/Drain Engineering and Circuit Topology

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Performance Investigation of Insulated Shallow Extension Silicon on Nothing (ISE-SON) MOSFET for Low Volatge Digital Applications

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Analysis of Hole Lifetime in SOI MOSFET Single-Photon Detector

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Zinc-Oxide Thin-Film Transistor With Self-Aligned Source/Drain Regions Doped With Implanted Boron for Enhanced Thermal Stability

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Experimental and Simulation Study of the Schottky Barrier Lowering by Substrate Doping Variation for PtSi Source/Drain SBFETs

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SiC Trench MOSFET With Integrated Side-Wall Schottky Barrier Diode Having P+ Electric Field Shield

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