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Publications by Mokeddem Nadjet
Characterization and Modeling the Effect of Temperature on Power HBTs InGaP/GaAs
International Journal of Electrical and Computer Engineering
Electronic Engineering
Electrical
Computer Science
Related publications
High DC Current Gain InGaP/GaAs HBTs Grown by LP-MOCVD
Electronics Letters
Electronic Engineering
Electrical
N ‐Doped InGaP Nanowire Shells in GaAs/InGaP Core‐Shell Pn ‐Junctions
Physica Status Solidi (B): Basic Research
Optical
Electronic
Condensed Matter Physics
Magnetic Materials
Raman and Photoluminescence Mapping of Lattice Matched InGaP/GaAs Heterostructures
Materials Research Society Symposium - Proceedings
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering
InGaP/InGaAsN/GaAs NpN Double-Heterojunction Bipolar Transistor
Applied Physics Letters
Astronomy
Physics
High Efficiency Tandem Solar Cell Based on InGaP and GaAs for Sustainable Energy Applications
International Journal of Computer Applications
Photoinduced Band-Bending Effect of Low Temperature GaAs on AlGaAs/InGaAs/GaAs Modulation-Doped Transistors
Journal of Applied Physics
Astronomy
Physics
Abruptness of GaAs/InGaP Hetero Interfaces Analyzed by Z-Contrast STEM
Materia Japan
Легкий Гибкий Солнечный Элемент На Основе Гетероэпитаксиальной Структуры InGaP/GaAs
Журнал технической физики
InGaP/GaAs/InGaP Double-Heterojunction Bipolar Transistors Grown by Solid-Source Molecular-Beam Epitaxy With a Valved Phosphorus Cracker
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
