Amanote Research
Register
Sign In
Discover open access scientific publications
Search, annotate, share and cite publications
Publications by N. Badereddine
Analysis of Resistive-Bridging Defects in SRAM Core-Cells: A Comparative Study From 90nm Down to 40nm Technology Nodes
Related publications
Multiple-Cell-Upsets on a Commercial 90nm SRAM in Dynamic Mode
Comparative Analysis of Various SRAM Cells With Low Power, High Read Stability and Low Area
International Journal of Engineering and Manufacturing
A Comparative Study of 6T and 8T SRAM Cell With Improved Read and Write Margins in 130 Nm CMOS Technology
WSEAS TRANSACTIONS ON CIRCUITS AND SYSTEMS
Technology: Bridging the Gap From Research to Practice
Cognitive Behaviour Therapy
Clinical Psychology
Performance Comparison of SRAM Cells in 45NM Technology in the Presence of a Memory Cell Control Circuit
International Journal of Engineering and Technology(UAE)
Architecture
Hardware
Engineering
Chemical Engineering
Biotechnology
Environmental Engineering
Computer Science
Design of Switched Capacitor Integrators Using 90nm Technology
CVR Journal of Science & Technology
Genetic Analysis of Down Syndrome-Associated Heart Defects in Mice
Human Genetics
Genetics
Comparative Analysis of 6T, 7T, 8T, 9T, and 10T Realistic CNTFET Based SRAM
Journal of Nanotechnology
Materials Science
Hazards and Glitch Power Reduction of CMOS Full Adder in 90nm Technology
CVR Journal of Science & Technology
