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Publications by N. Barradas

40% Tunneling Magnetoresistance After Anneal at 380 °C for Tunnel Junctions With Iron–oxide Interface Layers

Journal of Applied Physics

English

Related publications

Effects of B and C Doping on Tunneling Magnetoresistance in CoFe/MgO Magnetic Tunnel Junctions

Physical Review B

Condensed Matter Physics

Magnetic Materials

English

Large Inverse Tunneling Magnetoresistance in Co2Cr0.6Fe0.4Al∕MgO∕Co80Fe20 Magnetic Tunnel Junctions

Applied Physics Letters

English

Annealing Effect on Tunneling Magnetoresistance in MgO-based Magnetic Tunnel Junctions With FeMn Exchange-Bias Layer

Journal of Magnetism and Magnetic Materials

Condensed Matter Physics

Magnetic Materials

English

Numerical Study of Magnetoresistance in Ferromagnetic Tunnel Junctions With Disordered Barrier.

Journal of the Magnetics Society of Japan

English

Tunneling Anisotropic Magnetoresistance in Epitaxial CoFe/n-GaAs Junctions

Applied Physics Letters

English

Giant Tunnel Magnetoresistance in Magnetic Tunnel Junctions With a Crystalline MgO(0 0 1) Barrier

Journal of Physics D: Applied Physics

Condensed Matter Physics

Magnetic Materials

English

Defect-Assisted Tunneling Electroresistance in Ferroelectric Tunnel Junctions

Physical Review Letters

English

Understanding Tunneling Magnetoresistance During Thermal Annealing in MgO-based Junctions With CoFeB Electrodes

Physical Review B

English

Coexistence of Tunneling Magnetoresistance and Josephson Effects in SFIFS Junctions

English