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Publications by N. D. Abrosimova
Influence of Ge Ion Implantation Into Silicon Dioxide/Silicon Structure on Charge Accumulation Under Low–Energy Stationary Radiation
Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering
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Influence of Thermal Annealing on Charge Storage Behaviour of Ge Nanoclusters Synthesized With Low-Energy Ge Ion Implantation
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Charge State Defect Engineering of Silicon During Ion Implantation
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Charge Multiplication in Silicon Radiation Detectors Under Dense Irradiation
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Electrical Activation in Silicon-On-Insulator After Low Energy Boron Implantation
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The Influence of Ion Implantation by Phosphorous on Structural Changes in Porous Silicon
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Suppression of Ion-Implantation Induced Porosity in Germanium by a Silicon Dioxide Capping Layer
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3D Free-Form Patterning of Silicon by Ion Implantation, Silicon Deposition, and Selective Silicon Etching
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The Effect of Radiation on Ion-Implanted Silicon Detectors
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