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Publications by N. S. Mohamed

Dose Rate Linearity in 4h-SiC Schottky Diode-Based Detectors at Elevated Temperatures

IEEE Transactions on Nuclear Science
Electronic EngineeringNuclearNuclear EnergyHigh Energy PhysicsEngineeringElectrical
2017English

Related publications

the Effects of Electron Irradiation and Thermal Dependence Measurements on 4h-Sic Schottky Diode

Журнал технической физики
2017English

Characteristics of SiC Pillar-Shaped Nanostructure Schottky Diode

Journal of Applied Physics
AstronomyPhysics
2009English

Minority Carrier Trap in N-Type 4H–SiC Schottky Barrier Diodes

Crystals
Materials ScienceInorganic ChemistryChemical EngineeringCondensed Matter Physics
2019English

GaN-Based Schottky Diode

2018English

Effect of High-Energy Protons on 4h-SiC Radiation Detectors

Lithuanian Journal of Physics
AstronomyPhysics
2005English

Fatigue Damage and Lifetime of SiC/SiC Ceramic-Matrix Composite Under Cyclic Loading at Elevated Temperatures

Materials
Materials ScienceCondensed Matter Physics
2017English

Modeling of Inhomogeneous 4h-SiC Schottky and JBS Diodes in a Wide Temperature Range

Materials Science Forum
2016English

Total Dose Effects on 4h-SiC Bipolar Junction Transistors

Materials Science Forum
2017English

Vertical Conduction Mechanism of the Epitaxial Graphene/N-Type 4h-SiC Heterojunction at Cryogenic Temperatures

Applied Physics Letters
AstronomyPhysics
2012English

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