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Publications by O. A. Fedorovich
Investigation of the Influence of Oxygen on the Rate and Anisotropy of Deep Etching of Silicon in the Plasma-Chemical Reactor With the Controlled Magnetic Field
Технология и конструирование в электронной аппаратуре
Related publications
Some Investigations on the Anisotropy of the Chemical Etching of (Hk0) and (Hhl) Silicon Plates in a NaOH 35% Solution. Part I: 2D Etching Shapes
Active and Passive Electronic Components
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Chemical Etching of Silicon
Microscopy Today
The Influence of Longitudinal Magnetic-Field Gradient on the Transverse Relaxation Rate of Cesium Atoms
AIP Advances
Nanotechnology
Astronomy
Physics
Nanoscience
Modeling an Influence of Internal Mechanical Stresses on the Rate of Growth of Oxygen Precipitates in Silicon
Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering
The Black Silicon Method II:The Effect of Mask Material and Loading on the Reactive Ion Etching of Deep Silicon Trenches
Microelectronic Engineering
Surfaces
Electronic Engineering
Condensed Matter Physics
Electronic
Molecular Physics,
Nanoscience
Optical
Electrical
Atomic
Magnetic Materials
Films
Nanotechnology
Optics
Coatings
Study on the Etching Characteristics of Amorphous Carbon Layer in Oxygen Plasma With Carbonyl Sulfide
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Surfaces
Films
Interfaces
Condensed Matter Physics
Coatings
Investigation of the Magnetic Field Influence on the Plasma Parameter Homogeneity in a Large H−/ D−RF Ion Source Relevant for ITER
Plasma Sources Science and Technology
Condensed Matter Physics
The Influence of the Viscosity on the Oscillations of the Element of Magnetic Fluid in the Magnetic Field
EPJ Web of Conferences
Astronomy
Physics
Automated Complex for Investigation the Properties of Dusty Plasma in External Magnetic Field
Recent Contributions to Physics
