Amanote Research
Register
Sign In
Discover open access scientific publications
Search, annotate, share and cite publications
Publications by Q. Xua
Liberation of Ion Implanted Ge Nanocrystals From a Silicon Dioxide Matrix via Hydrofluoric Acid Vapor Etching
Materials Research Society Symposium - Proceedings
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering
Related publications
Reactive Ion Etching of PECVD Silicon Dioxide (SiO2) Layer for MEMS Application
Influence of Ge Ion Implantation Into Silicon Dioxide/Silicon Structure on Charge Accumulation Under Low–Energy Stationary Radiation
Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering
Electron Microscopy Studies of Ion Implanted Silicon
Ion-Irradiation-Induced Preferential Amorphization of Ge Nanocrystals in Silica
Physical Review B
The Effect of Radiation on Ion-Implanted Silicon Detectors
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
High Energy Physics
Instrumentation
Nuclear
Remote Plasma Etching of Silicon Nitride and Silicon Dioxide Using NF3/O2 Gas Mixtures
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Surfaces
Films
Interfaces
Condensed Matter Physics
Coatings
Hydrofluoric Acid Safety
Microscopy Today
3D Free-Form Patterning of Silicon by Ion Implantation, Silicon Deposition, and Selective Silicon Etching
Advanced Functional Materials
Materials Science
Condensed Matter Physics
Electrochemistry
Nanoscience
Optical
Biomaterials
Magnetic Materials
Nanotechnology
Chemistry
Electronic
Enhanced Electrochemical Etching of Ion Irradiated Silicon by Localized Amorphization
Applied Physics Letters
Astronomy
Physics