Amanote Research
Register
Sign In
Discover open access scientific publications
Search, annotate, share and cite publications
Publications by R. Asahi
Surface Properties of the Refractory Metal-Nitride Semiconductor ScN: Screened-Exchange LDA-FLAPW Investigations
Physical Review B
Related publications
Microstructure and Electronic Properties of the Refractory Semiconductor ScN Grown on MgO(001) by Ultra-High-Vacuum Reactive Magnetron Sputter Deposition
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Surfaces
Films
Interfaces
Condensed Matter Physics
Coatings
Gallium Nitride Metal-Semiconductor-Metal Photodetectors Prepared on Silicon Substrates
Journal of Applied Physics
Astronomy
Physics
Triple Axis X‐ray Investigations of Semiconductor Surface Corrugations
Journal of Applied Physics
Astronomy
Physics
Simple Screened Exact-Exchange Approach for Excitonic Properties in Solids
Physical Review B
Comparative Investigation of Endurance and Bias Temperature Instability Characteristics in Metal-Al2O3-Nitride-Oxide-Semiconductor (MANOS) and Semiconductor-Oxide-Nitride-Oxide-Semiconductor (SONOS) Charge Trap Flash Memory
Journal of Semiconductor Technology and Science
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Surface Treatments on the Characteristics of Metal–Oxide Semiconductor Capacitors
Crystals
Materials Science
Inorganic Chemistry
Chemical Engineering
Condensed Matter Physics
Transition Metal Ions in Semiconductors: LDA, LDA+U, and Experiment
Acta Physica Polonica A
Astronomy
Physics
The Investigations of the Amorphous Metal Properties in Liquid State
Journal of Physics: Conference Series
Astronomy
Physics
Evaluation of Titanium Silicon Nitride as Gate Electrodes for Complementary Metal-Oxide Semiconductor
Applied Physics Letters
Astronomy
Physics
