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Publications by R. Hasegawa
Effects of Substrate Defects on the Gate Leakage Current of AlGaN/GaN Heterojunction FETs Fabricated on Na Flux Bulk GaN
2P187 Stimulation-Dependent Remodeling of Synapses : Analysis by Imaging NMDA Receptor Dynamics
Seibutsu Butsuri
Related publications
Ultralow Reverse Leakage Current in AlGaN/GaN Lateral Schottky Barrier Diodes Grown on Bulk GaN Substrate
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Gate Current Analysis of AlGaN/GaN on Silicon Heterojunction Transistors at the Nanoscale
Applied Physics Letters
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Reverse Gate Bias Stress on High-Voltage AlGaN/GaN-on-Si Heterostructure FETs
Effects of P-GaN Capping Layer on the Current Collapse Behaviors in Normally-Off P-GaN Gate AlGaN/GaN HFETs
Current Limitation After Pinch-Off in AlGaN/GaN FETs
MRS Internet Journal of Nitride Semiconductor Research
On the Link Between Electroluminescence, Gate Current Leakage, and Surface Defects in AlGaN/GaN High Electron Mobility Transistors Upon Off-State Stress
Applied Physics Letters
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Polarization Effects in AlGaN/GaN and GaN/AlGaN/GaN Heterostructures
Journal of Applied Physics
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High Electron Mobility in AlGaN/GaN Heterostructures Grown on Bulk GaN Substrates
Applied Physics Letters
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Electroabsorption Modulators Based on Bulk GaN Films and GaN/AlGaN Multiple Quantum Wells
Journal of Applied Physics
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