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Publications by R.J.W. Hill
180 Nm Metal Gate, High-K Dielectric, Implant-Free III–V MOSFETs With Transconductance of Over 425 [Micro Sign]S∕[micro Sign]m
Electronics Letters
Electronic Engineering
Electrical
Related publications
Sub-Micron, Metal Gate, High-к Dielectric, Implant-Free, Enhancement-Mode III-V Mosfets
2.4 [Micro Sign]m Cutoff Wavelength AlGaAsSb∕InGaAsSb Phototransistors
Electronics Letters
Electronic Engineering
Electrical
28 GHz Optical Injection-Locked 1.55 [Micro Sign]m VCSELs
Electronics Letters
Electronic Engineering
Electrical
A High-Frequency Transconductance Method for Characterization of High- $\Kappa$ Border Traps in III-V MOSFETs
IEEE Transactions on Electron Devices
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
1.53 [Micro Sign]m GaInNAsSb Laser Diodes Grown on GaAs(100)
Electronics Letters
Electronic Engineering
Electrical
Intermodulation Linearity in High-K/Metal Gate 28 Nm RF CMOS Transistors
Electronics (Switzerland)
Control
Electronic Engineering
Signal Processing
Computer Networks
Systems Engineering
Hardware
Communications
Electrical
Architecture
Noise in Si and SiGe MOSFETs With High-K Gate Dielectrics
AIP Conference Proceedings
Astronomy
Physics
Alternative Surface Passivation on Germanium for Metal-Oxide-Semiconductor Applications With High-K Gate Dielectric
Applied Physics Letters
Astronomy
Physics
The V-Sign: A Simple Radiographic Sign of Shoulder Subluxation
Cureus
