A High-Frequency Transconductance Method for Characterization of High- $\Kappa$ Border Traps in III-V MOSFETs

IEEE Transactions on Electron Devices - United States
doi 10.1109/ted.2012.2231867
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Related search

180 Nm Metal Gate, High-K Dielectric, Implant-Free III–V MOSFETs With Transconductance of Over 425 [Micro Sign]S∕[micro Sign]m

Electronics Letters
Electronic EngineeringElectrical
2007English

Low-Frequency Noise in III-V Nanowire TFETs and MOSFETs

IEEE Electron Device Letters
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2017English

Characterization of Strain in Si for High Performance MOSFETs

2007English

Sub-Micron, Metal Gate, High-к Dielectric, Implant-Free, Enhancement-Mode III-V Mosfets

2007English

Low-Frequency Noise in High-K LaLuO3/TiN MOSFETs

2011English

Study of Gate Oxide Traps in HfO2/AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors by Use of Ac Transconductance Method

Applied Physics Letters
AstronomyPhysics
2013English

A Machine Learning Method for High-Frequency Data Forecasting

Lecture Notes in Computer Science
Computer ScienceTheoretical Computer Science
2014English

Non-Idealities in the 3ω Method for Thermal Characterization in the Low- And High-Frequency Regimes

AIP Advances
NanotechnologyAstronomyPhysicsNanoscience
2018English

Back-Gated Buried Oxide MOSFETs in a High-Voltage Bipolar Technology for Bonded Oxide/Soi Interface Characterization

IEEE Electron Device Letters
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
1998English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy