Amanote Research
Register
Sign In
Discover open access scientific publications
Search, annotate, share and cite publications
Publications by Radhakrishnan Sithanandam
A New SiGe Stepped Gate (SSG) Thin Film SOI LDMOS for Enhanced Breakdown Voltage and Reduced Delay
Related publications
Dual-Gate Low-Voltage Transparent Electric-Double-Layer Thin-Film Transistors With a Top Gate for Threshold Voltage Modulation
RSC Advances
Chemistry
Chemical Engineering
High Voltage (^|^gt;1100V) SOI LDMOS With an Accumulated Charges Layer for Double Enhanced Dielectric Electric Field
IEICE Electronics Express
Electronic Engineering
Condensed Matter Physics
Optical
Electrical
Magnetic Materials
Electronic
The Influence of the Area of a Thin Film Capacitor on the Breakdown Voltage
Microelectronics Reliability
Surfaces
Electronic Engineering
Condensed Matter Physics
Electronic
Molecular Physics,
Nanoscience
Films
Optical
Electrical
Atomic
Magnetic Materials
Nanotechnology
Reliability
Safety
Coatings
Optics
Quality
Risk
Robust Analytical Gate Delay Modeling for Low Voltage Circuits
A Robust and Physically Based Compact SOI-LDMOS Model
Reduced Reverse Narrow Channel Effect in Thin SOI nMOSFETs
IEEE Electron Device Letters
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Enhanced Hall Voltage in a Gate-Controlled InSb Hall Device
Journal of Applied Physics
Astronomy
Physics
MnO2 Thin Film Electrodes for Enhanced Reliability of Thin Glass Capacitors
Journal of the American Ceramic Society
Composites
Materials Chemistry
Ceramics
Low-Voltage Polymer Thin-Film Transistors With High-K HftiO Gate Dielectric Annealed in NH3 or N2