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Publications by Rongsheng Chen
Bottom-Gate Thin-Film Transistors Based on GaN Active Channel Layer
IEEE Electron Device Letters
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Optimal Design of Thermal Dissipation for the Array Power LED by Using the RSM With Genetic Algorithm
Modeling and Numerical Simulation of Material Science
Related publications
Molecular Doping Effect in Bottom-Gate, Bottom-Contact Pentacene Thin-Film Transistors
Journal of Applied Physics
Astronomy
Physics
Thin-Film Transistors: Top-Split-Gate Ambipolar Organic Thin-Film Transistors (Adv. Electron. Mater. 5/2018)
Advanced Electronic Materials
Optical
Electronic
Magnetic Materials
Width Dependent Electrically Stress Degradation of Bottom Gate Amorphous Indium Gallium Zinc Oxide Thin Film Transistors
A Study on Materials Interactions Between Mo Electrode and InGaZnO Active Layer in InGaZnO-based Thin Film Transistors
Journal of Materials Research
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering
Demonstration of Flexible Thin Film Transistors With GaN Channels
Applied Physics Letters
Astronomy
Physics
Positive Charge Trapping Phenomenon in N-Channel Thin-Film Transistors With Amorphous Alumina Gate Insulators
Journal of Applied Physics
Astronomy
Physics
Dual-Gate Low-Voltage Transparent Electric-Double-Layer Thin-Film Transistors With a Top Gate for Threshold Voltage Modulation
RSC Advances
Chemistry
Chemical Engineering
Feasibility of Large-Scale MoS2 Thin-Film Transistors on a GaN Substrate
Electric Double Layer Gate Field-Effect Transistors Based on Si
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
